Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction-Reference-Cited by-同舟云学术

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Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction

Published:2008-04-25 Issue:4 Volume:47 Page:2383-2387
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lim Andy Eu-Jin,Lee Rinus T. P.,Koh Alvin T. Y.,Samudra Ganesh S.,Kwong Dim-Lee,Yeo Yee-Chia

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Fully Silicided Metal Gates for High-Performance CMOS Technology: A Review

2. Threshold voltage control in NiSi-gated MOSFETs through SIIS

3. Fully Silicided Ni[sub 1−x]Pt[sub x]Si Metal Gate Electrode for p-MOSFETs

4. Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

5. Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion kinetics and evolution of self-assembled nickel germanide nanorings on germanised Si (100);RSC Advances;2015

2. Large Active Area Organic Photodiodes for Short-Pulse X-Ray Detection;IEEE Transactions on Electron Devices;2013-05

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