Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference4 articles.
1. Deposition control for reduction of 193 nm photoresist degradation in dielectric etching
2. Energy Control of Incident Ions to the Chamber-Wall by Using Push–Pull Bias (Phase-Controlled Bias) in UHF-ECR Etching System
3. Study of gate oxide breakdown caused by charge buildup during dry etching
4. Mechanism of Surface Charging Effects on Etching Profile Defects
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1. Deposition profile of ammonium bromide in N2/HBr plasmas for high-aspect-ratio multilayer etching;Japanese Journal of Applied Physics;2019-05-31
2. Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development;Japanese Journal of Applied Physics;2019-05-30
3. Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide;Japanese Journal of Applied Physics;2018-05-11
4. Effect of temperature on deposition layer formation in HBr/N2/fluorocarbon-based plasma;Japanese Journal of Applied Physics;2017-05-11
5. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2stacks;Japanese Journal of Applied Physics;2016-05-24
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