Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films-Reference-Cited by-同舟云学术

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Pseudo-Single-Nucleus Lateral Crystallization of Si Thin Films

Published:2008-03-21 Issue:3 Volume:47 Page:1862-1866
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Endo Takahiko,Taniguchi Yukio,Katou Tomoya,Shimoto Shigeyuki,Ohno Takashi,Azuma Kazufumi,Matsumura Masakiyo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices

2. 12.4: Late-News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly-Si TFTs

3. A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films

4. Novel Phase Modulator for ELA-Based Lateral Growth of Si

5. New Phase Modulators for Next-Generation Low-Temperature Crystallization Method of Si Films

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Poly-Si TFT Technology and Architecture;Introduction to Thin Film Transistors;2013

2. Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation;Japanese Journal of Applied Physics;2012-03-21

3. Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation;Japanese Journal of Applied Physics;2012-03-01

4. Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films;Japanese Journal of Applied Physics;2010-12-20

5. Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films;Japanese Journal of Applied Physics;2008-12-19

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