High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Electrical and optical properties of high performance MOCVD grown (AlxGa1−x)yIn1−yP visible light-emitting diodes
2. Recent progress of AlGaInP thin-film light-emitting diodes
3. High-brightness AlGaInP light emitting diodes
4. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
5. Recent developments in high brightness LEDs
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1. Improved Performance of AlGaInP Red Micro Light-Emitting Diodes by Sidewall Treatments of Citric Acid;IEEE Photonics Journal;2024-02
2. Efficiency Improvement of 630 nm AlGaInP Light-Emitting Diodes based on AlGaAs Bottom Window;Japanese Journal of Applied Physics;2013-10-01
3. Properties of the ITO layer in a novel red light-emitting diode;Journal of Semiconductors;2010-04
4. On an AlGaInP Multiple Quantum Well Light Emitting Diode with a Thin Carbon-Doped GaP Contact Layer Structure;Journal of The Electrochemical Society;2010
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