Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System-Reference-Cited by-同舟云学术

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Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

Published:2008-01-18 Issue:1 Volume:47 Page:124-129
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kao H. L.,Chen W. C.,Chien Wei-Cheng,Lin Hui-Feng,Chen Tzu Chieh,Lin Chung Yi,Lin Y. T.,Chyi J.-I.,Hsu C.-H.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. Theoretical study on SAW characteristics of layered structures including a diamond layer

2. High-frequency, high-sensitivity acoustic sensor implemented on ALN/Si substrate

3. Temperature effect and chemical response of surface acoustic wave (SAW) single-delay-line chemosensors

4. The Study of Preferred Orientation Growth of Aluminum Nitride Thin Films on Ceramic and Glass Substrates

5. Textured and smooth AlN films prepared by Helicon sputtering system

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1. Recent improvements on surface acoustic wave sensors based on graphenic nanomaterials;Materials Science in Semiconductor Processing;2023-11

2. High-Order Sezawa Mode Alscn/Gan/Sapphire Surface Acoustic Wave Resonators;2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS);2022-01-09

3. Carbothermal Reduction Synthesis of Aluminum Nitride from Al(OH)3/C/PVB Slurries Prepared by Three-Roll Mixing;Materials;2021-03-12

4. Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films;Journal of Applied Physics;2018-07-21

5. Controlling refractive index in AlN films by texture and crystallinity manipulation;Thin Solid Films;2017-08

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