Phase Transition Kinetics and Recording Characteristics of Nanocomposite Layers Prepared by Sputtering Process Utilizing AgInSbTe–SiO2Composite Target-Reference-Cited by-同舟云学术

Phase Transition Kinetics and Recording Characteristics of Nanocomposite Layers Prepared by Sputtering Process Utilizing AgInSbTe–SiO2Composite Target

Published:2008-07-18 Issue:7 Volume:47 Page:6029-6034
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mai Hung-Chuan,Hsieh Tsung-Eong,Huang Sung-Hsiu,Lin Shoou-Shyan,Lee Tsang-Sheau

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

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1. Nonvolatile floating gate memory containing AgInSbTe–SiO2nanocomposite layer and capping the HfO2/SiO2composite blocking oxide layer;Nanotechnology;2012-05-10

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4. Effect of Nitrogen Incorporation to $\hbox{AgInSbTe-SiO}_{2}$ Nanocomposite Thin Films Applied to Nonvolatile Floating Gate Memory;IEEE Transactions on Magnetics;2011-03

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