An Analytical Model for Silicon-on-Insulator Reduced Surface Field Devices with Semi-Insulating Polycrystalline Silicon Shielding Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference6 articles.
1. An analytical model for minimum drift region length of SOI RESURF diodes
2. Modeling Kirk effect of RESURF LDMOS
3. High-voltage planar devices using field plate and semi-resistive layers
4. Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology
5. Analytical model for the surface field distribution of SOI RESURF devices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique;Japanese Journal of Applied Physics;2015-01-26
2. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer;Chinese Physics Letters;2009-01
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