Study on Compensation of Thermal Stresses in the Fabrication Process of Thin-Film Transistor-Reference-Cited by-同舟云学术

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Study on Compensation of Thermal Stresses in the Fabrication Process of Thin-Film Transistor

Published:2008-04-18 Issue:4 Volume:47 Page:2238-2240
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Han Jin-Woo,Han Jeong-Min,Kim Byoung-Yong,Kim Young-Hwan,Kim Jong-Hwan,Seo Dae-Shik,Park Yong-Pil

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Interface crack between two elastic layers

2. Channel-cracking of thin films with the extended finite element method

3. Cracking in thin multi-layers with finite-width and periodic architectures

4. Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy

5. Mechanical and thermal stresses in multilayered materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure Dependent Phase Stability and Thermal Expansion of Ruddlesden–Popper Strontium Titanates;Chemistry of Materials;2018-09-26

2. Design and fabrication of stress-compensated optical coatings: Fabry–Perot filters for astronomical applications;Applied Optics;2014-04-15

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