Localization of 4 f State in YbRh2Si2 under Magnetic Field and High Pressure: Comparison with CeRh2Si2-Reference-Cited by-同舟云学术

Localization of 4 f State in YbRh2Si2 under Magnetic Field and High Pressure: Comparison with CeRh2Si2

Published:2006-11-15 Issue:11 Volume:75 Page:114709
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Knebel G.¹,Boursier R.¹,Hassinger E.¹,Lapertot G.¹,G. Niklowitz P.¹,Pourret A.¹,Salce B.¹,P. Sanchez J.¹,Sheikin I.²,Bonville P.³,Harima H.⁴,Flouquet J.¹

Affiliation:

1. Département de la Recherche Fondamentale sur la Matière Condensée, SPSMS, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

2. Grenoble High Magnetic Field Laboratory, CNRS, BP166, 38042 Grenoble, France

3. Département de Recherche sur l'Etat Condensé, les Atomes et les Molécules, SPEC, CEA Saclay, 91191 Gif-sur-Yvette, France

4. Department of Physics, Kobe University, Nada, Kobe 657-8501

Publisher

Japan Society of Applied Physics

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.75.114709

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