In-SituEtching of Semiconductor with CBr4in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/41/i=2S/a=1076/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In situ spectral reflectance analysis of the early stages of GaN thermal decomposition;Optik;2022-09
2. Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs;IEEE Journal of the Electron Devices Society;2021
3. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning;Journal of Crystal Growth;2017-05
4. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa;Journal of Crystal Growth;2016-01
5. Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE;Journal of Crystal Growth;2014-11
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