Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates

Published:2002-02-28 Issue:Part 1, No. 2B Volume:41 Page:972-976
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jiang Chao,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2S/a=972/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of (11n)A Facets in Selective Molecular-Beam Epitaxy;Japanese Journal of Applied Physics;2009-07-21

2. Strategies of Nanoscale Semiconductor Lasers;Nanotechnology for Electronic Materials and Devices;2007

3. Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP∕InP;Journal of Applied Physics;2006-05-15

4. Nanowire based quantum interference sensors for electromagnetic radiation;Journal of Applied Physics;2006-05

5. Nanolasers: lasing from nanoscale quantum wires;International Journal of Nanotechnology;2004

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