Evaluation of Effective Recombination Velocity Related to the Potential Barrier in n/n+Silicon Epitaxial Wafers-Reference-Cited by-同舟云学术

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Evaluation of Effective Recombination Velocity Related to the Potential Barrier in n/n+Silicon Epitaxial Wafers

Published:2002-03-15 Issue:Part 1, No. 3A Volume:41 Page:1214-1219
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takahashi Hidenori,Maekawa Takao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3R/a=1214/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer;Journal of Applied Physics;2024-06-17

2. Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods;IEEE Transactions on Electron Devices;2023-08

3. Silicon photoresistive sensors with improved performance;Journal of Applied Physics;2018-01-28

4. Remind Again; Quality of Thin Film Fabrication Process;Journal of the Vacuum Society of Japan;2010

5. Field Passivation of the Silicon Wafer Rear Surface for Reliable Bulk Recombination Lifetime Measurement;Journal of The Electrochemical Society;2008

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