Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect-Reference-Cited by-同舟云学术

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Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect

Published:2002-03-01 Issue:Part 2, No. 3A Volume:41 Page:L236-L238
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishida Akihiro,Ose Tomohisa,Nagasawa Hitoya,Ishino Kenei,Inoue Yoku,Fujiyasu Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3A/a=L236/pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN Based Quantum Cathodes;Vacuum Nanoelectronic Devices;2015-07-23

2. Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications;Japanese Journal of Applied Physics;2005-08-05

3. Resonant-tunneling electron emitter in an AlN∕GaN system;Applied Physics Letters;2005-05-02

4. Designs for λ=1.55 µm GaN-Based Intersubband Laser Active Region;Japanese Journal of Applied Physics;2004-11-10

5. Fabrication and characterization of short period AlN/GaN quantum cascade laser structures;Journal of Crystal Growth;2004-04

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