Abrupt Change in Surface Fermi Level of P-Type InP upon Annealing-Reference-Cited by-同舟云学术

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Abrupt Change in Surface Fermi Level of P-Type InP upon Annealing

Published:2002-02-28 Issue:Part 1, No. 2B Volume:41 Page:1067-1071
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kurayama Tetsuo,Sano Gennki,Sakai Masamichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2S/a=1067/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency;Applied Surface Science;2008-10

2. Comparative study of the GaAs(100) surface cleaned by atomic hydrogen;Applied Surface Science;2006-08

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