Preparation and Properties of Lead Titanate Gate Ion-Sensitive Field-Effect Transistors by the Sol

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Preparation and Properties of Lead Titanate Gate Ion-Sensitive Field-Effect Transistors by the Sol–Gel Method

Published:2002-02-15 Issue:Part 1, No. 2A Volume:41 Page:942-948
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jan Shiun-Sheng,Chen Ying-Chung,Chou Jung-Chuan,Cheng Chien-Chuan,Lu Chun-Te

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2R/a=942/pdf

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3. Polycrystalline fluorine-doped tin oxide as sensoring thin film in EGFET pH sensor;Journal of Materials Science;2010-05-19

4. pH-sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique;physica status solidi (a);2010-03-18

5. Design and Fabrication of pH Detecting System Using Lead Titanate Series Gate Ion-Sensitive Field Effect Transistors;Ferroelectrics;2009-06-30

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