High Power Density and Large Voltage Swing of Enhancement-Mode Al0.5Ga0.5As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 VL-Band Applications
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Published:2002-05-15
Issue:Part 1, No. 5A
Volume:41
Page:2902-2903
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Chiu Hsien-Chin,Yang Shih-Cheng,Chan Yi-Jen
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering