Epitaxial Growth of CaF2Films on Si(111) Studied by Scanning Tunneling Microscopy-Reference-Cited by-同舟云学术

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Epitaxial Growth of CaF2Films on Si(111) Studied by Scanning Tunneling Microscopy

Published:2002-01-15 Issue:Part 1, No. 1 Volume:41 Page:250-255
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kametani Keisuke,Sudoh Koichi,Iwasaki Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=1R/a=250/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15

2. Vapor Epitaxy of Fluorides on Semiconductors;Reference Module in Materials Science and Materials Engineering;2016

3. Ca-induced structural transformation of the single-domain Si(001) surface: CaF2/Si(001)-4° off;Surface Science;2014-05

4. Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template;Surface Science;2012-10

5. Contrast in scanning probe microscopy images of ultrathin insulator films;Applied Physics Letters;2006-02-06

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