Ge Doping Effect on Properties of AgInSe2Thin Films-Reference-Cited by-同舟云学术

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Ge Doping Effect on Properties of AgInSe2Thin Films

Published:2002-03-15 Issue:Part 1, No. 3A Volume:41 Page:1527-1531
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ema Yoshinori,Kato Hiroshi,Takahashi Takahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3R/a=1527/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell;Journal of Physics: Conference Series;2024-05-01

2. Surface activation of Si-based Schottky diodes by bacterial biosynthesized AgInSe2 trimetallic alloy nanoparticles with evidenced negative capacitance and enhanced electro-dielectric performance;Applied Surface Science;2023-09

3. Influence of Al dopant on structural and optical parameters of AgInSe2 thin film;Chalcogenide Letters;2022-06

4. On the Paramount Role of Absorber Stoichiometry in (Ag,Cu)(In,Ga)Se 2 Wide‐Gap Solar Cells;Solar RRL;2020-09-29

5. Annealing induced AgInSe2 formation from Ag/In/Ag/In multilayer film for solar cell absorbing layer;Optical Materials;2018-10

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