Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment-Reference-Cited by-同舟云学术

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Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment

Published:2002-04-01 Issue:Part 2, No. 4A Volume:41 Page:L412-L414
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ho-Nyeon,Park Jae-Cheol,Lee Won-Geon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4A/a=L412/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Ion Implantation Doping on the Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Films;Science of Advanced Materials;2016-02-01

2. Assessing the activity and diversity of fumarate-fed denitrifying bacteria by performing field single-well push-pull tests;Journal of Environmental Science and Health, Part A;2011-01

3. Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers;Japanese Journal of Applied Physics;2010-11-22

4. Radio-frequency interrogation of a fiber Bragg grating sensor in the configuration of a fiber laser with external cavities;Optik;2010-11

5. Micromasking effect and nanostructure self-formation on the surface of lead chalcogenide epitaxial films on Si substrates during argon plasma treatment;Journal of Physics D: Applied Physics;2009-07-31

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