Deep Electron Trapping Centers in Te-doped (AlxGa1-x)0.5In0.5P (x=0.5) Layers Grown by Metal-Organic Chemical Vapor Deposition
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Published:2002-06-15
Issue:Part 1, No. 6A
Volume:41
Page:3671-3672
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Sung Wei-Jer,Huang Kai-Feng,Tseng Tseung-Yuen
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering