Properties of the Hubbard Model for the Arbitrary Numbers of Up and Down Ship Electrons
Author:
Affiliation:
1. Department of Physics, University of Tokyo
2. Cavendish Laboratory
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
https://journals.jps.jp/doi/pdf/10.1143/JPSJ.39.1169
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Computer Study on the Metal-Nonmetal Transitions in Heavily Doped Semiconductors;Progress of Theoretical Physics Supplement;2013-05-16
2. On SCCF Treatment of the Hubbard Model of 1-D Alloys. Auger Densities;physica status solidi (b);1987-06-01
3. Modified mott-hubbard-anderson model results of an unrestricted hartree-fock pseudocluster calculation;Philosophical Magazine B;1980-12
4. Roles of the lower and the upper Hubbard bands and the donor-excitonic states in the theory of shallow-impurity states in doped semiconductors;Physical Review B;1980-06-15
5. Insulator-to-Metal Transition for a Half-Filled Hubbard Band in the Paramagnetic State;physica status solidi (b);1980-06-01
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