Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of Ni1−uPtu(0 < u < 0.15) germanosilicide;Journal of Applied Physics;2017-04-07
2. The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors;Journal of Nanoscience and Nanotechnology;2011-07-01
3. Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device;Japanese Journal of Applied Physics;2008-10-17
4. Hydrogenation-assisted nanocrystallization of amorphous silicon by radio-frequency plasma-enhanced chemical vapor deposition;Journal of Applied Physics;2006-11-15
5. Investigation of Ni reaction with sputtered amorphous SiGe thin film on SiO2 substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-01
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