A Novel Technique for UltrathinCoSi2Layers: Oxide Mediated Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of cobalt deposition and pretreatment process on electrical properties of products;Engineering Research Express;2021-12-01
2. Obtaining nanoscale CoSiO/Si/CoSi2 systems for increasing the range of light ray absorption energy;IOP Conference Series: Earth and Environmental Science;2020-12-01
3. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface;Technical Physics Letters;2020-08
4. Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN x interlayer deposited by MOCVD;Applied Physics A;2015-03-29
5. Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate;Japanese Journal of Applied Physics;2014-04-16
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