Behavior of Defects in Heavily Boron Doped Czochralski Silicon-Reference-Cited by-同舟云学术

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Behavior of Defects in Heavily Boron Doped Czochralski Silicon

Published:1997-03-01 Issue:Part 2, No. 3A Volume:36 Page:L249-L252
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ono Toshiaki,Asayama Eiichi,Horie Hiroshi,Hourai Masataka,Sano Masakazu,Tsuya Hideki,Nakai Kiyomichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon;Journal of Applied Physics;2017-06-07

2. Oxygen Precipitation in Silicon;Defects and Impurities in Silicon Materials;2015

3. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon;Journal of Applied Physics;2014-11-21

4. Structure of Ge–O complexes in Czochralski silicon;Physica B: Condensed Matter;2009-01

5. Rapid-thermal-processing-based internal gettering for heavily boron-doped Czochralski silicon;Journal of Applied Physics;2006-11-15

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