A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The gas-phase structure of the decasilsesquioxane Si10O15H10;Dalton Transactions;2009
2. Addition of POSS−T8 to the Si(100) Surface;The Journal of Physical Chemistry C;2008-01-01
3. Fully Condensed Polyhedral Oligosilsesquioxanes (POSS): From Synthesis to Application;Advances in Organometallic Chemistry;2008
4. The differential reactivity of octahydridosilsesquioxane on Si(100)-2×1 and Si(111)-7×7: a comparative experimental study;Ultramicroscopy;2003-10
5. Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7 × 7;Langmuir;2002-07-16
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