Amorphous and Microcrystalline Silicon Deposited by Low-Power Electron-Cyclotron Resonance Plasma-Enhanced Chemical-Vapor Deposition-Reference-Cited by-同舟云学术

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Amorphous and Microcrystalline Silicon Deposited by Low-Power Electron-Cyclotron Resonance Plasma-Enhanced Chemical-Vapor Deposition

Published:1997-01-15 Issue:Part 1, No. 1A Volume:36 Page:38-49
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Conde João Pedro,Schotten Volker,Arekat Safwan,Brogueira Pedro,Sousa Rui,Chu Virginia

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2at Various Substrate Temperatures;Japanese Journal of Applied Physics;2008-01-22

2. Structural Properties of Silicon Thin Films Prepared by Hot-Wire-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition;Japanese Journal of Applied Physics;2007-02-08

3. Amorphous (Protocrystalline) and Microcrystalline Thin Film Silicon Solar Cells;Nanostructured Materials for Solar Energy Conversion;2006

4. Low-Temperature Deposition of Hydrogenated Amorphous Silicon in an Electron Cyclotron Resonance Reactor for Flexible Displays;Proceedings of the IEEE;2005-07

5. Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals;Japanese Journal of Applied Physics;2004-12-09

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