Crystalline Structure Changes in GaN Films Grown at Different Temperatures-Reference-Cited by-同舟云学术

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Crystalline Structure Changes in GaN Films Grown at Different Temperatures

Published:1997-05-30 Issue:Part 2, No. 5B Volume:36 Page:L598-L600
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Heng-Ching,Ou Jehn,Chen Wei-Kuo,Chen Wen-Hsiung,Lee Ming-Chih

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy;Thin Solid Films;2013-06

2. Effect of growth temperature on structure properties of InN grown by pressurized-reactor metalorganic vapor phase epitaxy;physica status solidi (c);2010-12-02

3. Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3with Intentionally Added H2O;Japanese Journal of Applied Physics;2009-06-22

4. A New Preparation Method of ZnO Cubic Phase Particle and Its IR Spectrum;Japanese Journal of Applied Physics;2002-09-15

5. Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy;Microelectronics Reliability;2002-08

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