Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer-Reference-Cited by-同舟云学术

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Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer

Published:2006-05-09 Issue:5A Volume:45 Page:3829-3834
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fukumoto Yoshiyuki,Numata Hideaki,Suemitsu Katsumi,Nagahara Kiyokazu,Ohshima Norikazu,Amano Minoru,Asao Yoshiaki,Hada Hiromitsu,Yoda Hiroaki,Tahara Shuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large perpendicular magnetic anisotropy in epitaxial Fe/MgAl2O4(001) heterostructures;Applied Physics Express;2018-06-01

2. Ta thickness-dependent perpendicular magnetic anisotropy features in Ta/CoFeB/MgO/W free layer stacks;Thin Solid Films;2015-07

3. Thermally stable perpendicular magnetic anisotropy features of Ta/TaOx/Ta/CoFeB/MgO/W stacks via TaOx underlayer insertion;Journal of Applied Physics;2014-09-21

4. Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure;Journal of Applied Physics;2011-04

5. Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures;Journal of Applied Physics;2011-04

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