Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric Acid
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Published:2006-04-07
Issue:4A
Volume:45
Page:2408-2411
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Mizuta Naomi,Watanabe Satoru
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering