Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes
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Published:2006-11-08
Issue:11
Volume:45
Page:8648-8649
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Kim Jaeho,Cha Jung-Ho,Kwon Young-Se
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering