New Electron Beam Proximity Effects Correction Approach for 45 and 32 nm Nodes-Reference-Cited by-同舟云学术

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New Electron Beam Proximity Effects Correction Approach for 45 and 32 nm Nodes

Published:2006-08-04 Issue:8A Volume:45 Page:6462-6467
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Manakli S.,Docherty K.,Pain L.,Todeschini J.,Jurdit M.,Icard B.,Chomat M.,Minghetti B.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Beam Lithography of Nanostructures;Reference Module in Materials Science and Materials Engineering;2016

2. Analysis of irradiance distribution in optical proximity printing of micro annulus apertures;Japanese Journal of Applied Physics;2014-05-21

3. Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography;Nanotechnology;2012-03-13

4. Proximity effect correction using multilevel area density maps for character projection based electron beam direct writing toward 14 nm node and beyond;Alternative Lithographic Technologies IV;2012-03-01

5. Proximity effect correction sensitivity analysis;SPIE Proceedings;2010-02-03

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