Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 µm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
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Published:2006-03-27
Issue:3B
Volume:45
Page:2033-2036
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Hasegawa Shigehiko,Doi Wataru,Yabuuchi Atsushi,Asahi Hajime
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering