On the Annealing Effects of GaN Metal–Insulator–Semiconductor Capacitors with Photo-Chemical Vapor Deposition Oxide Layers
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Published:2006-04-25
Issue:4B
Volume:45
Page:3045-3048
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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1. Trends and Outlook;Germanium-Based Technologies;2007