Electrical and Structural Properties of Heavily Ge-Doped GaAs Grown by Molecular-Beam Epitaxy
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Published:2006-06-08
Issue:6A
Volume:45
Page:4921-4925
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Chavanapranee Tosaporn,Ichiryu Dai,Horikoshi Yoshiji
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering