Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining-Reference-Cited by-同舟云学术

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Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining

Published:2006-10-24 Issue:10B Volume:45 Page:8277-8280
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sano Yasuhisa,Watanabe Masayo,Yamamura Kazuya,Yamauchi Kazuto,Ishida Takeshi,Arima Kenta,Kubota Akihisa,Mori Yuzo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-speed etching of gallium nitride substrate using hydrogen-contained atmospheric-pressure plasma;Applied Physics Express;2023-04-01

2. Overview and Technical Issue on the Hard-to-Processing Technique for the Power Semiconductors;Journal of the Japan Society for Precision Engineering;2022-06-05

3. Atomic surface manufacturing based on plasma-induced atom-selective etching;SCIENTIA SINICA Technologica;2022-05-30

4. High-Speed Etching of Silicon Carbide Wafer Using High-Pressure SF6 Plasma;ECS Journal of Solid State Science and Technology;2021-01-01

5. Review of several precision finishing processes for optics manufacturing;Journal of Micromanufacturing;2018-06-20

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