Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
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Published:2006-04-25
Issue:4B
Volume:45
Page:3358-3363
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Lim Jong-Won,Ahn Ho-Kyun,Ji Hong-Gu,Chang Woo-Jin,Mun Jae-Kyoung,Kim Haecheon
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering