Luminescence Due to High-Density Electron-Hole Plasma in GaAs
Author:
Affiliation:
1. Electrotechnical Laboratory
2. The Institute for Solid State Physics, The University of Tokyo
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.43.1646
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Photoluminescence of electron-hole plasma in semi-insulating undoped GaAs;Semiconductors;2004-12
4. Photoluminescence characterization of a counterpropagating twin photons structure: hot carrier effects in AlGaAs;Optical Materials;2003-09
5. Study on diffusion characteristics of the excited carriers in electron-hole plasma in GaAs using high-energy ions;Journal of Luminescence;2001-12
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