Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/17/i=3/a=509/pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Revealing of lattice defects on (111) faces of gallium phosphide and indium phosphide by chemical etching;Crystal Research and Technology;1988-01
2. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals;Journal of Crystal Growth;1986-04
3. Influence of Microdefects on the Generation of Dislocations in Homoepitaxial Gallium Phosphide Layers Grown on LEC Substrates;Crystal Research and Technology;1982
4. Microdefects in lec gallium phosphide and generation of dislocations in homoepitaxial layers;Acta Physica Academiae Scientiarum Hungaricae;1981-07
5. High-Efficiency GaP Green LED's with Double n-LPE Layers;Japanese Journal of Applied Physics;1980-11
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