Electrical and Optical Properties of Boron Doped Amorphous Si Prepared by CVD Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/17/i=10/a=1897/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Crystallization of Silicon Microstructures Through Rapid Self-Heating for High-Performance Electronics on Arbitrary Substrates;Nanoscience and Nanotechnology Letters;2012-10-01
2. Self-heating of silicon microwires: Crystallization and thermoelectric effects;Journal of Materials Research;2011-04-18
3. Electron spin resonance studies on buried oxide silicon‐on‐insulator;Applied Physics Letters;1987-02-02
4. Chapter 3 Magnetic Resonance Measurements in a-Si:H;Semiconductors and Semimetals;1984
5. A physical mechanism of current-induced resistance decrease in heavily doped polysilicon resistors;IEEE Transactions on Electron Devices;1982-08
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