Characteristics of SiO2as a High-Resolution Electron Beam Resist

Author:

Hiroshima Hiroshi,Komuro Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Direct-write electron beam lithography in silicon dioxide at low energy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09

2. Preferential nucleation of silicon nano-crystals on electron beam exposed SiO2 surfaces;MICROELECTRON ENG;2004

3. Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device;Japanese Journal of Applied Physics;2002-06-30

4. Modulable Nanometer-Scale Surface Architecture Using Spin-Coating on an Adsorbed Collagen Layer;Nano Letters;2001-04-13

5. Properties of Si nanowire devices fabricated by using an inorganic EB resist process;Superlattices and Microstructures;2000-11

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