Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates-Reference-Cited by-同舟云学术

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Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates

Published:1993-01-30 Issue:Part 1, No. 1B Volume:32 Page:632-636
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimomura Hirofumi,Okada Yoshitaka,Matsumoto Hisashi,Kawabe Mitsuo,Kitami Yoshizo,Bando Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs-based optoelectronics grown on GaAs/Si virtual substrates with multiple spaced thermal-cycle annealing;Thin Solid Films;2021-09

2. Applications of Gas-Phase Cleaning for Removal of Surface Contaminants;Developments in Surface Contamination and Cleaning: Applications of Cleaning Techniques;2019

3. Gas-Phase Cleaning for Removal of Surface Contaminants;Developments in Surface Contamination and Cleaning, Volume 9;2017

4. Three-step growth of metamorphic GaAs on Si(001) by low-pressure metal organic chemical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-09

5. The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning;Applied Surface Science;2007-08

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