A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure-Reference-Cited by-同舟云学术

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A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure

Published:1993-01-30 Issue:Part 1, No. 1B Volume:32 Page:469-473
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Kazuhiro,Murai Hiroyuki,Sakamoto Takao,Baert Kris,Tokioka Hidetada,Sugawara Takashi,Masutani Yuuichi,Namizaki Hirofumi,Nunoshita Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-aligned offset gate poly-Si TFTs using photoresist trimming technology;Science China Information Sciences;2014-12-15

2. A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts;IEEE Electron Device Letters;2009-01

3. Characteristics of High-<tex>$kappa$</tex>Spacer Offset-Gated Polysilicon TFTs;IEEE Transactions on Electron Devices;2004-08

4. Photo-Leakage Current of Poly-Si Thin Film Transistors with Offset and Lightly Doped Drain Structure;Japanese Journal of Applied Physics;1999-10-15

5. Suppression of Leakage Current in n-Channel Polysilicon Thin-Film Transistors UsingNH3Annealing;Japanese Journal of Applied Physics;1995-02-28

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