Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy

Published:1993-07-15 Issue:Part 2, No. 7B Volume:32 Page:L974-L977
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Auret F. D.,Goodman S. A.,Meyer W. E.,Erasmus R. M.,Myburg G.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Güneş Pilleri Uygulamalarında Kullanılan Organik Tabanlı Schottky Diyotlarında İyonize Radyasyonun Aygıt Parametrelerine Etkisi;Karadeniz Fen Bilimleri Dergisi;2021-06-15

2. γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N;Radiation Physics and Chemistry;2018-06

3. Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes;Current Applied Physics;2016-08

4. Field dependent emission rates in radiation damaged GaAs;Journal of Applied Physics;2014-07-07

5. Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs;Journal of Applied Physics;2010-06-15

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