Self Organized Grain Growth Larger than 1 µm through Pulsed-Laser-Induced Melting of Silicon Films-Reference-Cited by-同舟云学术

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Self Organized Grain Growth Larger than 1 µm through Pulsed-Laser-Induced Melting of Silicon Films

Published:1993-10-15 Issue:Part 2, No. 10B Volume:32 Page:L1485-L1488
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sameshima Toshiyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Agglomerated-Silicon Thin-Film Transistor;IEEE Electron Device Letters;2010-01

2. Applications of excimer laser in nanofabrication;Applied Physics A;2009-11-05

3. Improved nanofabrication through guided transient liquefaction;Nature Nanotechnology;2008-05

4. Pulsed Laser Annealing of Thin Silicon Films;Japanese Journal of Applied Physics;2006-04-07

5. 28.1: AMOLED using CW laser Crystallized Polycrystalline Silicon Thin-Film Transistor;SID Symposium Digest of Technical Papers;2006

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