Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films-Reference-Cited by-同舟云学术

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Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films

Published:1993-01-15 Issue:Part 2, No.1A/B Volume:32 Page:L20-L23
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shiraiwa Toshiaki,Sugiura Osamu,Kanoh Hiroshi,Asai Norihito,Usami Koh-ichi,Hattori Takeo,Matsumura Masakiyo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Some issues on hydrogen and hydrogenation of plasma enhanced chemical vapor deposited films in a-Si:H thin-film transistors;Vacuum;2000-11

2. CNx thin films obtained by laser induced CVD in different gas–substrate systems;Applied Surface Science;1997-02

3. Correlations between structural and optoelectronic properties of a-Si:H grown by homogeneous chemical vapor deposition;Journal of Non-Crystalline Solids;1996-10

4. Post-hydrogenation of low-pressure chemical vapour deposited amorphous silicon;Semiconductor Science and Technology;1996-04-01

5. Preferential Nucleation of Nanocrystalline Silicon along Microsteps;Japanese Journal of Applied Physics;1996-02-28

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