Chaotic Behavior of a Driven Current Filament Observed in High-Purity n-GaAs at 4.2 K-Reference-Cited by-同舟云学术

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Chaotic Behavior of a Driven Current Filament Observed in High-Purity n-GaAs at 4.2 K

Published:1988-01-15 Issue:1 Volume:57 Page:26-29
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Aoki Kazunori¹,Yamamoto Keiichi¹,Mugibayashi Nobumichi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.57.26

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-level model of oscillating electric-field-induced current instability and chaos in n-GaAs;Journal of Physics: Condensed Matter;2007-03-05

2. Spatiotemporal dynamics of current-density filaments in a periodically driven multilayered semiconductor device;Physical Review B;1999-03-15

3. Frequency-locked, quasiperiodic, and chaotic motions of current-density filaments in a semiconductor device;Physical Review B;1996-11-15

4. Period-doubling route to chaos and novel application principles in S-shaped NDR instabilities;Semiconductor Science and Technology;1994-05-01

5. Hierarchy of Current Instabilities in the Impact Ionization Avalanche in Semiconductors;Negative Differential Resistance and Instabilities in 2-D Semiconductors;1993

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