LMTO-ASA Calculations on Si/NiSi2Interfaces
Author:
Affiliation:
1. Fujitsu Laboratories Ltd.
2. Institute of Physics, College of Arts and Sciences, University of Tokyo
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.57.2253
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interfaces;Materials Science and Technology;2013-02-15
2. Ab initiostudy of theCoSi2(111)/Si(111)interface;Physical Review B;1999-12-15
3. Full-potential total-energy investigation on the lattice relaxation at the two types ofNiSi2/Si(111) interface;Physical Review B;1995-06-15
4. Schottky-barrier height and electronic structure of the Si interface with metal silicides:CoSi2,NiSi2, andYSi2;Physical Review B;1994-09-15
5. MeV metal ion implantations for buried layer fabrication in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02
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