Lateral Photovoltaic Effect Observed in Nitrogen Ion-ImplantedP-Type Si–the Relation between the Dose and the Photovoltage-Reference-Cited by-同舟云学术

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Lateral Photovoltaic Effect Observed in Nitrogen Ion-ImplantedP-Type Si–the Relation between the Dose and the Photovoltage

Published:1973-06 Issue:6 Volume:12 Page:953-954
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Niu Hirohiko,Matsuda Tetsuro,Takai Munezo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/12/i=6/a=953/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Characteristics of the Lateral Photovoltaic Effect and Their Application to the Measurement of Junction Capacitance;Japanese Journal of Applied Physics;1977-09

2. Nitrogen as dopant in silicon and germanium;Physica Status Solidi (a);1976-05-16

3. Application of Lateral Photovoltaic Effect to the Measurement of the Physical Quantities ofP-NJunctions–Sheet Resistivity and Junction Conductance of N2+Implanted Si;Japanese Journal of Applied Physics;1976-04

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