Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces-Reference-Cited by-同舟云学术

Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces

Published:1991-10-15 Issue:Part 1, No. 10 Volume:30 Page:2432-2437
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saito Yasuyuki,Fukuda Katsuyoshi,Nozaki Chiharu,Yasuami Sigeru,Nishio Johji,Yashiro Satao,Washizuka Shoichi,Watanabe Masayuki,Hirose Mayumi,Kitaura Yoshiaki,Uchitomi Naotaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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