Growth of Short-Period ZnSe-ZnSxSe1-xStrained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Growth of Short-Period ZnSe-ZnSxSe1-xStrained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy

Published:1991-03-15 Issue:Part 2, No. 3B Volume:30 Page:L451-L454
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Yi-hong,Kawakami Yoichi,Fujita Shizuo,Fujita Shigeo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 7.1.6 Quantum wells and superlattices based on ZnSe and its alloys;Growth and Structuring;2013

2. Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys;Journal of Applied Physics;2003-11

3. Preparation of ZnO films on sapphire (01 $$\bar 1$$ 2) substrates by low-pressure organometallic chemical vapour deposition;Journal of Materials Science Letters;1996-01

4. Effect of photo-irradiation on the growth of ZnSe in metalorganic molecular beam epitaxy;Journal of Crystal Growth;1994-03

5. Preparation of ZnO Films by Low-pressure Organometallic Chemical Vapor Deposition;Chemistry Letters;1993-12

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